Tipard Blu-ray Converter V7.3.28 Incl Patch 🏴
Tipard Blu-ray Converter V7.3.28 Incl Patch 🏴
Tipard Blu-ray Converter V7.3.28 Incl Patch
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The present invention relates to an active matrix-type liquid crystal display, and more particularly to a liquid crystal display equipped with a thin film transistor (TFT) matrix that is capable of coping with the recent development of smaller and thinner liquid crystal display devices, and a method for fabricating the same.
Large-scale liquid crystal display devices (LCDs) are being widely used as display devices of personal computers, word processors, navigation systems, etc., in recent years.
For such large-scale LCDs, thin film transistors (TFTs) are formed over a transparent substrate such as a glass substrate, and fabricated by a liquid crystal display process. Such TFTs are used for switching pixels so as to display information as a two-dimensional image, and are also used as switching elements of a driver circuit for driving peripheral IC chips.
TFTs are classified into an amorphous silicon (a-Si) TFT using a-Si for a semiconductor layer, a polycrystalline silicon (poly-Si) TFT using poly-Si for the semiconductor layer, and a metal-insulator-semiconductor (MIS) TFT using a non-single-crystal semiconductor layer (e.g., a metal film) as a semiconductor layer for the TFT. A liquid crystal display device using the MIS type of TFT, or the so-called low-temperature poly-Si TFT that can be fabricated at a relatively low temperature, offers the advantages that it can be used for flexible displays, and the fabrication process of the same can be simplified.
The characteristic required of the TFT in a liquid crystal display device is to have a high mobility. To this end, the state of art for a-Si TFTs has used non-crystalline semiconductors as the active layer, but the mobility has been insufficient and the operation of the TFT is not stable. By contrast, poly-Si TFTs have a mobility of 100 to 1000 times higher than that of the a-Si TFTs, and therefore they are used in liquid crystal display devices.
The poly-Si TFTs are fabricated using a vapor phase process (CVD process) as follows.
First, a semiconductor layer is formed of poly-Si or non-single crystal semiconductor over a gate insulating layer, and a gate
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