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Adobe Photoshop CS3 Arabic-Egyptian.The present invention relates to a method for manufacturing a semiconductor device having a semiconductor integrated circuit, and more particularly to a method for manufacturing a semiconductor device which can decrease the number of steps for manufacturing the semiconductor device and reduce the cost.
In the manufacturing of a semiconductor device, if a step for forming a silicide film on a source/drain region of a transistor, a step for forming a contact hole, or the like is omitted, a semiconductor device can be manufactured more cheaply. In particular, in the manufacturing of a semiconductor device having an SRAM (Static Random Access Memory), a process for forming a high resistivity portion on an insulating film of the SRAM is omitted to reduce the cost.
An example of the manufacturing method for the semiconductor device having the SRAM is explained below with reference to the drawings. FIGS. 1A to 1G are cross-sectional views showing the steps of the manufacturing method for the semiconductor device having the SRAM according to the prior art.
As shown in FIG. 1A, an element isolation film 2 is formed on a Si substrate 1. Then, a gate insulating film 3 is formed on the element isolation film 2, and a gate electrode 4 made of polysilicon is formed on the gate insulating film 3. Subsequently, a photoresist film 5 is formed on the surface of the gate electrode 4. The gate electrode 4 is patterned by using the photoresist film 5 as a mask. As a result, an element isolation region and a gate electrode 4 are formed. Then, a resist material is coated on the entire surface of the Si substrate 1, and the resist material is patterned by using the gate electrode 4 as a mask to form a resist pattern 6 having an opening portion 6a at a region of the Si substrate 1 where the gate electrode 4 is formed.
Then, boron ions are implanted to form a base region of a high resistance portion on the Si substrate 1 at a region
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